QS5W1TR

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы

Current - Collector (Ic) (Max) :

3A

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA, 2V

Frequency - Transition :

270MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

1.25W

Series :

-

Supplier Device Package :

TSMT5

Transistor Type :

2 NPN (Dual) Common Emitter

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

30V