RQ1E050RPTR

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

5A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

700mW (Ta)

Rds On (Max) @ Id, Vgs :

31 mOhm @ 5A, 10V

Series :

-

Supplier Device Package :

TSMT8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA