RQ3E130MNTB1

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

13A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Packaging :

Tape & Reel (TR)

Part Status :

Not For New Designs

Power Dissipation (Max) :

2W (Ta)

Rds On (Max) @ Id, Vgs :

8.1 mOhm @ 13A, 10V

Series :

-

Supplier Device Package :

8-HSMT (3.2x3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA