RQ6E085BNTCR

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

8.5A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-74, SOT-457

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

1.25W (Tc)

Rds On (Max) @ Id, Vgs :

14.4 mOhm @ 8.5A, 10V

Series :

-

Supplier Device Package :

SOT-457

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA