SP8K31TB1

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

3.5A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Not For New Designs

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

120 mOhm @ 3.5A, 10V

Series :

-

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA