SP8M51TB1

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

3A, 2.5A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Digi-Reel®

Part Status :

Obsolete

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

-

Series :

-

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

-