US6J2TR

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

1A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD, Flat Leads

Packaging :

Cut Tape (CT)

Part Status :

Not For New Designs

Power - Max :

1W

Rds On (Max) @ Id, Vgs :

390 mOhm @ 1A, 4.5V

Series :

-

Supplier Device Package :

TUMT6

Vgs(th) (Max) @ Id :

2V @ 1mA