STB11NM60N-1

производитель :

STMicroelectronics

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

90W (Tc)

Rds On (Max) @ Id, Vgs :

450 mOhm @ 5A, 10V

Series :

MDmesh™ II

Supplier Device Package :

I2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA