STB80NF55L-08-1

производитель :

STMicroelectronics

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

300W (Tc)

Rds On (Max) @ Id, Vgs :

8 mOhm @ 40A, 10V

Series :

STripFET™ II

Supplier Device Package :

I2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.5V @ 250µA