STD4N52K3

производитель :

STMicroelectronics

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)

Drain to Source Voltage (Vdss) :

525V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

334pF @ 100V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

45W (Tc)

Rds On (Max) @ Id, Vgs :

2.6 Ohm @ 1.25A, 10V

Series :

SuperMESH3™

Supplier Device Package :

D-Pak

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 50µA