STD96N3LLH6

производитель :

STMicroelectronics

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

5.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

70W (Tc)

Rds On (Max) @ Id, Vgs :

4.2 mOhm @ 40A, 10V

Series :

DeepGATE™, STripFET™ VI

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA