STS9P2UH7

производитель :

STMicroelectronics

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 16V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Digi-Reel®

Part Status :

Obsolete

Power Dissipation (Max) :

2.7W (Tc)

Rds On (Max) @ Id, Vgs :

22.5 mOhm @ 4.5A, 4.5V

Series :

STripFET™

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA