BC338-25 B1G

производитель :

Taiwan Semiconductor Corporation

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

800mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Part Status :

Active

Power - Max :

625mW

Series :

-

Supplier Device Package :

TO-92

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

25V