TSM052N06PQ56 RLG

производитель :

Taiwan Semiconductor Corporation

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3686pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

83W (Tc)

Rds On (Max) @ Id, Vgs :

5.2 mOhm @ 20A, 10V

Series :

-

Supplier Device Package :

8-PDFN (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA