TSM180N03CS RLG

производитель :

Taiwan Semiconductor Corporation

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

2.5W (Tc)

Rds On (Max) @ Id, Vgs :

18 mOhm @ 8A, 10V

Series :

-

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA