TSM2NB60CH C5G

производитель :

Taiwan Semiconductor Corporation

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

249pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

44W (Tc)

Rds On (Max) @ Id, Vgs :

4.4 Ohm @ 1A, 10V

Series :

-

Supplier Device Package :

TO-251 (IPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 250µA