CSD19531Q5AT

производитель :

Texas Instruments

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

100A (Ta)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3870pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

3.3W (Ta), 125W (Tc)

Rds On (Max) @ Id, Vgs :

6.4 mOhm @ 16A, 10V

Series :

NexFET™

Supplier Device Package :

8-VSONP (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.3V @ 250µA