CSD25213W10

производитель :

Texas Instruments

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

1.6A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

478pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-UFBGA, DSBGA

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

1W (Ta)

Rds On (Max) @ Id, Vgs :

47 mOhm @ 1A, 4.5V

Series :

NexFET™

Supplier Device Package :

4-DSBGA (1x1)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-6V

Vgs(th) (Max) @ Id :

1.1V @ 250µA