CSD25401Q3

производитель :

Texas Instruments

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

14A (Ta), 60A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

2.8W (Ta)

Rds On (Max) @ Id, Vgs :

11.7 mOhm @ 10A, 4.5V

Series :

NexFET™

Supplier Device Package :

8-VSON-CLIP (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.2V @ 250µA