CSD86360Q5D

производитель :

Texas Instruments

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

50A

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

12.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 12.5

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerLDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

13W

Rds On (Max) @ Id, Vgs :

-

Series :

NexFET™

Supplier Device Package :

8-LSON (5x6)

Vgs(th) (Max) @ Id :

2.1V @ 250µA