TPS1101DR

производитель :

Texas Instruments

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

2.3A (Ta)

Drain to Source Voltage (Vdss) :

15V

Drive Voltage (Max Rds On, Min Rds On) :

2.7V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

791mW (Ta)

Rds On (Max) @ Id, Vgs :

90 mOhm @ 2.5A, 10V

Series :

-

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+2V, -15V

Vgs(th) (Max) @ Id :

1.5V @ 250µA