1066 ЧАСТИ: СУДЫ СЕГОДНЯ
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- производитель :
- Toshiba Semiconductor and Storage
- категория продукта :
- Транзисторы - биполярные (BJT) - RF
- Current - Collector (Ic) (Max) :
- 80mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 20mA, 10V
- Frequency - Transition :
- 7GHz
- Gain :
- 11.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1GHz
- Operating Temperature :
- -
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Packaging :
- Cut Tape (CT)
- Part Status :
- Discontinued at Digi-Key
- Power - Max :
- 200mW
- Series :
- -
- Supplier Device Package :
- US6
- Transistor Type :
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Datasheet :
- HN3C10FUTE85LF
Перекрестные ссылки
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Акции 2,207
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Акции 2,892
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Акции 3,158
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Акции 2,175
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Акции 3,613
ЛЮДИ, КОТОРЫЕ БЫВАЮТ Транзисторы - биполярные (BJT) - RF ТАКЖЕ БУГТТ
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Акции 1,871
-
Акции 2,979
-
Акции 1,560
-
Акции 3,231
-
Акции 1,151
ПРОСМОТР ЛЮДЕЙ HN3C10FUTE85LF THEN BOUGHT
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Акции 2,486
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Акции 2,867
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Акции 3,771
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Акции 695
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Акции 1,658
Последние новости
05/13/2019
05/13/2019
05/09/2019
Номер поискового запроса HN3C Включено слово 15
номер части | производитель | Акции | Описание |
---|---|---|---|
HN3C10FUTE85LF | Toshiba Semiconductor and Storage | 2,207 | TRANSISTOR NPN US6 |
HN3C10FUTE85LF | Toshiba Semiconductor and Storage | 2,892 | TRANSISTOR NPN US6 |
HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage | 3,158 | TRANS 2NPN 120V 0.1A SM6 |
HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage | 2,175 | TRANS 2NPN 120V 0.1A SM6 |
HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage | 3,613 | TRANS 2NPN 120V 0.1A SM6 |
HN3C51F-BL(TE85L,F | Toshiba Semiconductor and Storage | 3,478 | TRANS 2NPN 120V 0.1A SM6 |
HN3C51F-BL(TE85L,F | Toshiba Semiconductor and Storage | 2,088 | TRANS 2NPN 120V 0.1A SM6 |
HN3C51F-BL(TE85L,F | Toshiba Semiconductor and Storage | 3,760 | TRANS 2NPN 120V 0.1A SM6 |
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