НЕТ ЦЕНЫ
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- производитель :
- Toshiba Semiconductor and Storage
- категория продукта :
- Транзисторы - биполярные (BJT) - RF
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 7.7GHz
- Gain :
- 10.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.45dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-243AA
- Packaging :
- Digi-Reel®
- Part Status :
- Active
- Power - Max :
- 1.6W
- Series :
- -
- Supplier Device Package :
- PW-MINI
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 5.3V
- Datasheet :
- MT3S113P(TE12L,F)
Перекрестные ссылки
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Акции 1,240
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Акции 3,502
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Акции 3,509
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Акции 2,038
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Акции 3,348
ЛЮДИ, КОТОРЫЕ БЫВАЮТ Транзисторы - биполярные (BJT) - RF ТАКЖЕ БУГТТ
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Акции 1,871
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Акции 2,979
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Акции 1,560
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Акции 3,231
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Акции 1,151
ПРОСМОТР ЛЮДЕЙ MT3S113P(TE12L,F) THEN BOUGHT
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Акции 2,486
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Акции 2,867
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Акции 3,771
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Акции 695
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Акции 1,658
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Последние новости
05/13/2019
05/13/2019
05/09/2019
Номер поискового запроса MT3S Включено слово 15
| номер части | производитель | Акции | Описание |
|---|---|---|---|
| MT3S20P(TE12L,F) | Toshiba Semiconductor and Storage | 1,240 | TRANS RF NPN 12V 1GHZ PW-MINI |
| MT3S20P(TE12L,F) | Toshiba Semiconductor and Storage | 3,502 | TRANS RF NPN 12V 1GHZ PW-MINI |
| MT3S20P(TE12L,F) | Toshiba Semiconductor and Storage | 3,509 | TRANS RF NPN 12V 1GHZ PW-MINI |
| MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | 2,038 | TRANS RF NPN 7GHZ 80MA UFM |
| MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | 3,348 | TRANS RF NPN 7GHZ 80MA UFM |
| MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | 1,387 | TRANS RF NPN 7GHZ 80MA UFM |
| MT3S111P(TE12L,F) | Toshiba Semiconductor and Storage | 1,122 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S111P(TE12L,F) | Toshiba Semiconductor and Storage | 3,258 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S111P(TE12L,F) | Toshiba Semiconductor and Storage | 1,281 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S16U(TE85L,F) | Toshiba Semiconductor and Storage | 3,176 | TRANS RF NPN 5V 1GHZ USM |
| MT3S16U(TE85L,F) | Toshiba Semiconductor and Storage | 2,649 | TRANS RF NPN 5V 1GHZ USM |
| MT3S16U(TE85L,F) | Toshiba Semiconductor and Storage | 849 | TRANS RF NPN 5V 1GHZ USM |
| MT3S113P(TE12L,F) | Toshiba Semiconductor and Storage | 1,861 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S113P(TE12L,F) | Toshiba Semiconductor and Storage | 889 | RF SIGE HETEROJUNCTION BIPOLAR N |
| MT3S113(TE85L,F) | Toshiba Semiconductor and Storage | 2,098 | RF SIGE HETEROJUNCTION BIPOLAR N |
Связанные ключевые слова "MT3S113P(TE12L,F)"
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