SSM6L35FE,LM

производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

180mA, 100mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 3V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

150mW

Rds On (Max) @ Id, Vgs :

3 Ohm @ 50mA, 4V

Series :

-

Supplier Device Package :

ES6 (1.6x1.6)

Vgs(th) (Max) @ Id :

1V @ 1mA