SSM6N16FUTE85LF

производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

100mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

9.3pF @ 3V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

200mW

Rds On (Max) @ Id, Vgs :

3 Ohm @ 10mA, 4V

Series :

-

Supplier Device Package :

US6

Vgs(th) (Max) @ Id :

1.1V @ 100µA