SSM6N57NU,LF

производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

1W

Rds On (Max) @ Id, Vgs :

46 mOhm @ 2A, 4.5V

Series :

-

Supplier Device Package :

6-µDFN(2x2)

Vgs(th) (Max) @ Id :

1V @ 1mA