TBC847B,LM

производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

150mA

Current - Collector Cutoff (Max) :

30nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

320mW

Series :

-

Supplier Device Package :

SOT-23

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

400mV @ 100mA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V