TJ80S04M3L(T6L1,NQ

производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

80A (Ta)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

158nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7770pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

5.2 mOhm @ 40A, 10V

Series :

U-MOSVI

Supplier Device Package :

DPAK+

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -20V

Vgs(th) (Max) @ Id :

3V @ 1mA