TK4R4P06PL,RQ

производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

58A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

48.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3280pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

87W (Tc)

Rds On (Max) @ Id, Vgs :

4.4 mOhm @ 29A, 10V

Series :

U-MOSIX-H

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 500µA