TPN3R704PL,L1Q

производитель :

Toshiba Semiconductor and Storage

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

8-PowerVDFN

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

630mW (Ta), 86W (Tc)

Rds On (Max) @ Id, Vgs :

3.7 mOhm @ 40A, 10V

Series :

U-MOSIX-H

Supplier Device Package :

8-TSON Advance (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.4V @ 0.2mA