SI1965DH-T1-GE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

1.3A

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

1.25W

Rds On (Max) @ Id, Vgs :

390 mOhm @ 1A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

SC-70-6 (SOT-363)

Vgs(th) (Max) @ Id :

1V @ 250µA