SI2305ADS-T1-E3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

5.4A (Tc)

Drain to Source Voltage (Vdss) :

8V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 4V

Mounting Type :

Surface Mount

Operating Temperature :

-50°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

960mW (Ta), 1.7W (Tc)

Rds On (Max) @ Id, Vgs :

40 mOhm @ 4.1A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

800mV @ 250µA