SI3552DV-T1-E3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

-

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

1.15W

Rds On (Max) @ Id, Vgs :

105 mOhm @ 2.5A, 10V

Series :

TrenchFET®

Supplier Device Package :

6-TSOP

Vgs(th) (Max) @ Id :

1V @ 250µA (Min)