SI5908DC-T1-GE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

4.4A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

1.1W

Rds On (Max) @ Id, Vgs :

40 mOhm @ 4.4A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

1206-8 ChipFET™

Vgs(th) (Max) @ Id :

1V @ 250µA