SI6968BEDQ-T1-E3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

5.2A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-TSSOP (0.173", 4.40mm Width)

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

1W

Rds On (Max) @ Id, Vgs :

22 mOhm @ 6.5A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

8-TSSOP

Vgs(th) (Max) @ Id :

1.6V @ 250µA