SI9926CDY-T1-GE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

3.1W

Rds On (Max) @ Id, Vgs :

18 mOhm @ 8.3A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

8-SO

Vgs(th) (Max) @ Id :

1.5V @ 250µA