SIR108DP-T1-RE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

12.4A (Ta), 45A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

41.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

5W (Ta), 65.7W (Tc)

Rds On (Max) @ Id, Vgs :

13.5 mOhm @ 10A, 10V

Series :

TrenchFET® Gen IV

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.6V @ 250µA