SISA10DN-T1-GE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2425pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

3.6W (Ta), 39W (Tc)

Rds On (Max) @ Id, Vgs :

3.7 mOhm @ 10A, 10V

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -16V

Vgs(th) (Max) @ Id :

2.2V @ 250µA