SIZ914DT-T1-GE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

16A, 40A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1208pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

22.7W, 100W

Rds On (Max) @ Id, Vgs :

6.4 mOhm @ 19A, 10V

Series :

TrenchFET®

Supplier Device Package :

8-PowerPair®

Vgs(th) (Max) @ Id :

2.4V @ 250µA