SQJ962EP-T1-GE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

PowerPAK® SO-8 Dual

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

25W

Rds On (Max) @ Id, Vgs :

60 mOhm @ 4.3A, 10V

Series :

Automotive, AEC-Q101, TrenchFET®

Supplier Device Package :

PowerPAK® SO-8 Dual

Vgs(th) (Max) @ Id :

2.5V @ 250µA