SQV120N10-3M8_GE3

производитель :

Vishay Siliconix

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - одиночные

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7230pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

250W (Tc)

Rds On (Max) @ Id, Vgs :

3.8 mOhm @ 20A, 10V

Series :

Automotive, AEC-Q101, TrenchFET®

Supplier Device Package :

TO-262-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA