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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.1A US6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 200mW | US6 | 2 N-Channel (Dual) | Standard | 20V | 100mA | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | 9.3pF @ 3V |
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