- Series :
- Part Status :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
22 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
1,361
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,179
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||
|
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ПОЛУЧИТЬ ЦИТАТЫ |
2,113
Сегодня корабль + бесплатная ночная доставка
|
Vishay Siliconix | MOSFET 2N-CH 25V 8A 8-SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.2W | 8-SO | 2 N-Channel (Dual) | Standard | 25V | 8A | 19.5 mOhm @ 7A, 4.5V | 2V @ 250µA | 36nC @ 10V | 1255pF @ 15V | ||
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2,694
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Not For New Designs | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
704
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||
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|
|
1,206
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
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3,247
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,345
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||
|
|
|
3,335
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
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|
|
1,967
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,889
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | ||
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|
|
1,141
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | |||
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|
|
2,082
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,823
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||
|
|
|
3,517
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
|
|
3,602
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
|
|
1,309
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | HEXFET® | Not For New Designs | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
617
Сегодня корабль + бесплатная ночная доставка
|
Vishay Siliconix | MOSFET 2N-CH 25V 8A 8SOIC | TrenchFET® | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.2W | 8-SO | 2 N-Channel (Dual) | Standard | 25V | 8A | 19.5 mOhm @ 7A, 4.5V | 2V @ 250µA | 36nC @ 10V | 1255pF @ 15V | ||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,739
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,416
Сегодня корабль + бесплатная ночная доставка
|
Diodes Incorporated | MOSFET N/P-CH 30V 8-SOIC | - | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.8W | 8-SO | N and P-Channel | Logic Level Gate | 30V | 5.8A, 4.8A | 25 mOhm @ 5.8A, 10V | 1V @ 250µA (Min) | 36nC @ 10V | 1800pF @ 25V | ||
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|
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ПОЛУЧИТЬ ЦИТАТЫ |
2,746
Сегодня корабль + бесплатная ночная доставка
|
Diodes Incorporated | MOSFET N/P-CH 30V 8-SOIC | - | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.8W | 8-SO | N and P-Channel | Logic Level Gate | 30V | 5.8A, 4.8A | 25 mOhm @ 5.8A, 10V | 1V @ 250µA (Min) | 36nC @ 10V | 1800pF @ 25V | ||
|
|
|
3,362
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 60V 8A 8-SOIC | HEXFET® | Not For New Designs | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 8A | 17.8 mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | 1330pF @ 30V |
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