- Производство :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,942
Сегодня корабль + бесплатная ночная доставка
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Renesas Electronics America | MOSFET N-CH 250V 0.4A TO-92 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 | 750mW (Ta) | N-Channel | 250V | 400mA (Ta) | 5.7 Ohm @ 200mA, 4V | - | 3.7nC @ 4V | 80pF @ 25V | 2.5V, 4V | ±10V | ||
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1,015
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CH 60V 400MA TO-92 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 625mW (Ta) | N-Channel | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V | |||
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1,749
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N-CH 60V 400MA TO-92 | - | Active | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 625mW (Ta) | N-Channel | 60V | 400mA (Ta) | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 4.5V, 10V | ±20V |
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