- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
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Microsemi Corporation | MOSFET N-CH 1000V 30A TO264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1040W (Tc) | N-Channel | - | 1000V | 30A (Tc) | 460 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | ||
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Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET N-CH 1000V 30A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 1000V | 30A (Tc) | 440 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V |
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