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ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,993
Сегодня корабль + бесплатная ночная доставка
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | 8-CDIP Exposed Pad | - | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V | |||
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1,197
Сегодня корабль + бесплатная ночная доставка
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Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | HTMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP Exposed Pad | 8-CDIP-EP | 50W (Tj) | N-Channel | 55V | - | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 290pF @ 28V | 5V | 10V |
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