- Производство :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
15 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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654
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,455
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
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836
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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3,148
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,989
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
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2,183
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
|
2,465
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,485
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
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|
|
3,265
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
|
1,316
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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744
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,874
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 2.4A MLP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.3W (Ta), 35W (Tc) | N-Channel | - | 55V | 2.4A (Ta), 15A (Tc) | 900 mOhm @ 15A, 10V | 4V @ 250µA | 11.5nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
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|
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694
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 2.4A MLP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.3W (Ta), 35W (Tc) | N-Channel | - | 55V | 2.4A (Ta), 15A (Tc) | 900 mOhm @ 15A, 10V | 4V @ 250µA | 11.5nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
|
3,192
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET N-CH 55V 2.4A MLP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 8-MLP (3.3x3.3) | 2.3W (Ta), 35W (Tc) | N-Channel | - | 55V | 2.4A (Ta), 15A (Tc) | 900 mOhm @ 15A, 10V | 4V @ 250µA | 11.5nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
3,963
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET P-CH 55V 12A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |
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