DMG1016V-7

производитель :

Diodes Incorporated

категория продукта :

Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Current - Continuous Drain (Id) @ 25°C :

870mA, 640mA

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 16V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

530mW

Rds On (Max) @ Id, Vgs :

400 mOhm @ 600mA, 4.5V

Series :

-

Supplier Device Package :

SOT-563

Vgs(th) (Max) @ Id :

1V @ 250µA