BFU580GX

производитель :

NXP USA Inc.

категория продукта :

Транзисторы - биполярные (BJT) - RF

Current - Collector (Ic) (Max) :

60mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 30mA, 8V

Frequency - Transition :

11GHz

Gain :

10.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.4dB @ 1.8GHz

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

1W

Series :

-

Supplier Device Package :

SOT-223

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

12V