FGD3N60LSDTM

производитель :

ON Semiconductor

категория продукта :

Транзисторы - IGBT - Single

Current - Collector (Ic) (Max) :

6A

Current - Collector Pulsed (Icm) :

25A

Gate Charge :

12.5nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

40W

Reverse Recovery Time (trr) :

234ns

Series :

-

Supplier Device Package :

D-Pak

Switching Energy :

250µJ (on), 1mJ (off)

Td (on/off) @ 25°C :

40ns/600ns

Test Condition :

480V, 3A, 470 Ohm, 10V

Vce(on) (Max) @ Vge, Ic :

1.5V @ 10V, 3A

Voltage - Collector Emitter Breakdown (Max) :

600V